1. Thin film deposition process classify

MBE: Molecular beam epitaxy

ARE: Activated reactive evaporation

ICBD: Ionized cluster beam deposition

2.Sputtering process

Sputtering: When a solid surface is bombarded with energetic particles such as accelerated ions, surface atoms of the solid are scattered backward due to collisions between the surface atoms and energetic particles. This phenomenonis called back-sputtering, or simply sputtering. Cathode sputtering, cathode disintegrationand impact evaporation are also used in the same sense.

Cathode sputtering is used for the deposition of thin films. Several sputtering systems are proposed for thin-film deposition including DC diode, RF diode, magnetronand ion-beam sputtering.

3. DC cathode sputtering system

Among these sputtering systems, the simples model is the DC diode sputtering system. The DC sputtering system is composed of a pair of planar electrodes. One of the electrodes is a cold cathode and the other is the anode. The front surface of the cathode is covered with target materials to be deposited. The substrates are placed on the anode. The sputtering chamber is filled with sputtering gas, typically argon gas at 5 Pa. The glow dischargeis maintained under the application of DC voltage between the electrodes. The Ar ions generated in the glow dischargeare accelerated at the cathode fall and sputter the target, resulting in the deposition of the thin films on the substrates. In the DC sputtering system, the target is composed of metal since the glow dischargecurrent flow) is maintained between the metallic electrodes.

 

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